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ST2300 - N-Channel Enhancement Mode MOSFET

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Description

The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number ST2300
Manufacturer Stanson Technology
File Size 380.20 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST2300 Datasheet
Additional preview pages of the ST2300 datasheet.

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ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L FEATURE 20V/6.0A, RDS(ON) = 22mΩ (Typ.) @VGS = 10V 20V/5.0A, RDS(ON) = 36mΩ @VGS = 4.5V 20V/4.5A, RDS(ON) = 45mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 60mΩ @VGS = 1.
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