Datasheet4U Logo Datasheet4U.com

ST2301 - P Channel Enchancement Mode MOSFET

Datasheet Summary

Description

The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

📥 Download Datasheet

Datasheet preview – ST2301

Datasheet Details

Part number ST2301
Manufacturer Stanson Technology
File Size 124.77 KB
Description P Channel Enchancement Mode MOSFET
Datasheet download datasheet ST2301 Datasheet
Additional preview pages of the ST2301 datasheet.

📁 Similar Datasheet

  • ST2302 - N-Channel MOSFET (VBsemi)
  • ST230C - PHASE CONTROL THYRISTORS (IRF)
  • ST230C04C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C08C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C12C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C14C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C16C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C18C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230C20C - PHASE CONTROL THYRISTORS (International Rectifier)
  • ST230S - Phase Control Thyristor (INCHANGE)
Other Datasheets by Stanson Technology
  • ST2301A - P-Channel Enhancement Mode MOSFET
  • ST2300 - N-Channel Enhancement Mode MOSFET
  • ST2300SRG - N-Channel Enhancement Mode MOSFET
  • ST2302 - 3.6A N-Channel Enchancement Mode MOSFET
  • ST2303 - P Channel Enchancement Mode MOSFET
  • ST2303SRG - P-Channel Enhancement Mode MOSFET
  • ST2304 - 3.2A N-Channel Enhancement Mode MOSFET
  • ST2304SRG - 3.2A N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com P Channel Enchancement Mode MOSFET -2.8A DESCRIPTION ST2301 The ST2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE z -20V/-2.8A, RDS(ON) = 120m-ohm @VGS = -4.5V z -20V/-2.0A, RDS(ON) = 170m-ohm @VGS = -2.
Published: |