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ST2309ES Datasheet - Stanson Technology

ST2309ES P-Channel Enhancement Mode MOSFET

ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ST2309ES Datasheet (858.63 KB)

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Datasheet Details

Part number:

ST2309ES

Manufacturer:

Stanson Technology

File Size:

858.63 KB

Description:

P-channel enhancement mode mosfet.

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ST2309ES P-Channel Enhancement Mode MOSFET Stanson Technology

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