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STN8205D Datasheet - Stanson

STN8205D - Dual N Channel Enhancement Mode MOSFET

STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application, such a

STN8205D-Stanson.pdf

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Datasheet Details

Part number:

STN8205D

Manufacturer:

Stanson

File Size:

351.78 KB

Description:

Dual n channel enhancement mode mosfet.

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