SSW60R043SFD2 - 600V N-Channel Super-Junction MOSFET

Product Overview

Datasheet Details

Part number	SSW60R043SFD2
Manufacturer	Super Semiconductor
File Size	669.85 KB
Description	600V N-Channel Super-Junction MOSFET
Datasheet	SSW60R043SFD2 Datasheet
Additional preview pages of the SSW60R043SFD2 datasheet.

Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
Fast-Recovery body diode.
Extremely Low Reverse Recovery Charge.
650V @TJ = 150 ℃.
Typ. RDS(on) = 36mΩ.
Ultra Low Gate Charge (typ. Qg = 140nC).
100% avalanche tested SSW60R043SFD2 TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Sin.

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Published: Jul 30, 2025 |