Part number:
SSW60R070S2E
Manufacturer:
Super Semiconductor
File Size:
702.52 KB
Description:
600v n-channel super-junction mosfet.
SSW60R070S2E-SuperSemiconductor.pdf
Datasheet Details
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs
SSW60R070S2E Features
* Multi-Epi process SJ-FET
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 60mΩ
* Ultra Low Gate Charge (typ. Qg = 76nC)
* 100% avalanche tested SSW60R070S2E TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain
SSW60R070S2E-SuperSemiconductor.pdf
Datasheet Details
SSW60R070S2E
Super Semiconductor
702.52 KB
600v n-channel super-junction mosfet.
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