SSW60R070S2E Datasheet - Super Semiconductor

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SSW60R070S2E 600V N-Channel Super-Junction MOSFET

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET Gen-Ⅱ SS *60R070S2E Rev..
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lo.

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Datasheet Details

Part number:

SSW60R070S2E

Manufacturer:

Super Semiconductor

File Size:

702.52 KB

Description:

600V N-Channel Super-Junction MOSFET

Features

* Multi-Epi process SJ-FET
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 60mΩ
* Ultra Low Gate Charge (typ. Qg = 76nC)
* 100% avalanche tested SSW60R070S2E TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain

SSW60R070S2E Distributors

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SSW60R070S2E 600V N-Channel Super-Junction MOSFET Super Semiconductor

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