* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices VGS(th) (max) 1.SV 1.SV T0-39 TNOS02
TN06L
Supertex
225.81 KB
N-channel enhancement-mode vertical dmos power fets.
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N-Channel Enhancement-Mode Vertical DMOS Power FETs
TN06L
Ordering Information
BVoss I BVOGS
20V
RDS(ON)
(max)
0.750
40V 0.75.
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