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MJ11032 - Darlington Power Transistors

Description

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range Value 120 120 5.0

Features

  • Designed for use as output devices in complementary General purpose amplifier.
  • High Gain Darlington performance.
  • High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A.
  • Monolithic construction with built-in base-emitter shunt resistor.
  • RoHS Compliant TO-3 Mechanical Data.
  • Case: TO-3, Metal Can Package Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCBO VCEO VEBO IC ICM IB PC Rthjc TJ, TSTG.

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Datasheet preview – MJ11032

Datasheet Details

Part number MJ11032
Manufacturer TAITRON
File Size 333.29 KB
Description Darlington Power Transistors
Datasheet download datasheet MJ11032 Datasheet
Additional preview pages of the MJ11032 datasheet.

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    Full PDF Text Transcription

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    Darlington Power Transistors (NPN) MJ11032 Darlington Power Transistors (NPN) Features  Designed for use as output devices in complementary General purpose amplifier  High Gain Darlington performance  High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A  Monolithic construction with built-in base-emitter shunt resistor  RoHS Compliant TO-3 Mechanical Data  Case: TO-3, Metal Can Package Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCBO VCEO VEBO IC ICM IB PC Rthjc TJ, TSTG Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance from Junction to Case Operating Junction and Storage T
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