2SA1611 - Transistor

Product Overview

TY Semiconductor

Part number	2SA1611
Manufacturer	TY Semiconductor
File Size	91.47 KB
Description	Transistor
Datasheet	2SA1611 Datasheet
Additional preview pages of the 2SA1611 datasheet.

High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain.
Collector-emitter saturat.

📁 Similar Datasheet

2SA1610 - HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1612 - AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1615 - PNP Silicon Transistor (NEC)
2SA1615-Z - PNP Silicon Transistor (NEC)
2SA1617 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1618 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1619 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA1619A - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)

Other Datasheets by TY Semiconductor

Published: Oct 25, 2013 |