TSM4N60 600V N-Channel Power MOSFET

Taiwan Semiconductor Company

Description

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V.
The TSM4N60 is produced using advanced planar stripe, DMOS technology.

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Datasheet Specifications

Part number: TSM4N60
Manufacturer: Taiwan Semiconductor Company
File Size: 329.72 KB
Datasheet: TSM4N60_TaiwanSemiconductorCompany.pdf
Description: 600V N-Channel Power MOSFET

Features

* Robust high voltage termination
* Avalanche energy specified
* Diode is characterized for use in bridge circuits
* Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N6

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TSM4N60 600V N-Channel Power MOSFET Taiwan Semiconductor Company

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