TSM4N60 Datasheet - Taiwan Semiconductor Company

TSM4N60 600V N-Channel Power MOSFET

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor .

TSM4N60 Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N6

TSM4N60_TaiwanSemiconductorCompany.pdf