TSM4N60

600V N-Channel Power MOSFET

Taiwan Semiconductor Company

TSM4N60 Features

* Robust high voltage termination

* Avalanche energy specified

* Diode is characterized for use in bridge circuits

* Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N6

TSM4N60 General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor .

TSM4N60 Datasheet (329.72 KB)

TSM4N60 Datasheet Preview — Preview of TSM4N60 PDF

Datasheet Details

Part number:

TSM4N60

Manufacturer:

Taiwan Semiconductor Company

File Size:

329.72 KB

Description:

600v n-channel power mosfet.
TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V.

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TSM4N60 600V N-Channel Power MOSFET Taiwan Semiconductor Company

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TSM4N60 Features

TSM4N60 General Description

Datasheet Details

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