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TSM4NC60CI N-Channel Power MOSFET

TSM4NC60CI Description

TSM4NC60CI Taiwan Semiconductor N-Channel Power MOSFET 600V, 4A, 2.5Ω .

TSM4NC60CI Features

* 100% UIS and Rg tested
* Advanced planar process
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

TSM4NC60CI Applications

* AC/DC LED Lighting
* Power Supply KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 V 2.5 Ω 18 nC ITO-220 Not Recommended ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit Drain-Source Voltage Gate-Source Voltage Contin

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Datasheet Details

Part number
TSM4NC60CI
Manufacturer
Taiwan Semiconductor
File Size
388.09 KB
Datasheet
TSM4NC60CI-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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Taiwan Semiconductor TSM4NC60CI-like datasheet