TSM4N80 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 3 @ VGS =10V ID.
The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number: TSM4N80
Manufacturer: Taiwan Semiconductor
File Size: 358.27 KB
Datasheet: TSM4N80-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) 3Ω (Max. ) Low gate charge typical @ 25nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N80CZ C0 TSM4N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: C13

TSM4N80 Distributors

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TSM4N80 N-Channel Power MOSFET Taiwan Semiconductor

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