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TSM4N90 N-Channel Power MOSFET

TSM4N90 Description

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 4 @ VGS =10V ID.
The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM4N90 Features

* Low RDS(ON) 4Ω (Max. ) Low gate charge typical @ 25nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM4N90CZ C0 Package TO-220 Packing 50pcs / Tube TSM4N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Abso

TSM4N90 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B13

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Datasheet Details

Part number
TSM4N90
Manufacturer
Taiwan Semiconductor
File Size
410.15 KB
Datasheet
TSM4N90-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM4N90-like datasheet