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TSM414K34 - 30V N-Channel MOSFET

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM414K34
Manufacturer Taiwan Semiconductor Company
File Size 227.49 KB
Description 30V N-Channel MOSFET
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Preliminary TSM414K34 www.DataSheet4U.com 30V N-Channel MOSFET with Schottky Diode SOP-8 Pin Definition: 1. Anode 8. Cathode 2. Anode 7. Cathode 3. Source 6. Drain 4. Gate 5. Drain MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 55 @ VGS = 10V 65 @ VGS = 4.5V ID (A) 4 2 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) 30 0.51 IF (A) 3 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM414K34CS RL Package SOP-8 Packing 2.
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