TSM9926D Datasheet - Taiwan Semiconductor Company

Dual N-Channel Power MOSFET

* Advance Trench Process Technology

* High Density Cell Design for Ultra Low On- resistance APPLICATION

* Specially Designed for Li-on Battery Packs

* Battery Switch Application KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 4.5V VGS = 2.5V Qg 20 30 4

TSM9926D

Taiwan Semiconductor Company

237.25 KB

Dual n-channel power mosfet.

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