TSM9N50 Datasheet - Taiwan Semiconductor Company

TSM9N50 500V N-Channel Power MOSFET

The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

TSM9N50 Features

* Low RDS(ON) 0.85Ω @ VGS = 10V Low gate charge typical @ 63nC (Typ.) Low Crss typical @ 120pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM9N50CZ C0 TSM9N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Max

TSM9N50 Datasheet (238.82 KB)