TSM300NB06CR Datasheet - Taiwan Semiconductor

TSM300NB06CR - N-Channel Power MOSFET

TSM300NB06CR Features

* Low RDS(ON) to minimize conductive losses

* Low gate charge for fast power switching

* 100% UIS and Rg tested.

* 175°C Operating Junction Temperature

* Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC

* Halogen-free according to IEC 61249-2-21 KE

Datasheet Details

TSM300NB06CR

Taiwan Semiconductor

378.60 KB

N-channel power mosfet.

📁 Related Datasheet

📌 All Tags