* Low RDS(ON) 3.3Ω (Typ.) Low gate charge typical @ 19nC (Typ.) Low Crss typical @ 10.2pF (Typ.) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Re
TSM3N80
Taiwan Semiconductor
803.60 KB
N-channel power mosfet.
TSM3N80
800V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
800
RDS(on)(Ω)
4.2 @ VGS =10V
.
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