TSM300NB06DCR Datasheet - Taiwan Semiconductor

TSM300NB06DCR, Dual N-Channel Power MOSFET

TSM300NB06DCR Taiwan Semiconductor Dual N-Channel Power MOSFET 60V, 25A, 30mΩ .

TSM300NB06DCR-TaiwanSemiconductor.pdf

TSM300NB06DCR Datasheet Preview — Preview of TSM300NB06DCR PDF

Datasheet Details

Part number:

TSM300NB06DCR

Manufacturer:

Taiwan Semiconductor

File Size:

292.24 KB

Description:

Dual N-Channel Power MOSFET

Features

* Low RDS(ON) to minimize conductive losses
* Low gate charge for fast power switching
* 100% UIS and Rg tested
* RoHS Compliant

Applications

* BLDC Motor Control
* Battery Power Management
* DC-DC Converter
* Secondary Synchronous Rectification PDFN56 Dual KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V VGS = 10V 30 RDS(on) (max) mΩ VGS = 7V 42.3 Qg 17 nC Note: MSL 1 (Moisture Sensitivity Level) p

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TSM300NB06DCR Dual N-Channel Power MOSFET Taiwan Semiconductor

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