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TSM35N10

100V N-Channel Power MOSFET

TSM35N10 Features

* Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe

TSM35N10 General Description

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr.

TSM35N10 Datasheet (572.70 KB)

Preview of TSM35N10 PDF

Datasheet Details

Part number:

TSM35N10

Manufacturer:

Taiwan Semiconductor

File Size:

572.70 KB

Description:

100v n-channel power mosfet.
TSM35N10 100V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 100 RDS(on)(mΩ) 37 @ VGS =10V .

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TAGS

TSM35N10 100V N-Channel Power MOSFET Taiwan Semiconductor

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