TSM35N10 Datasheet (Taiwan Semiconductor) - 100V N-Channel Power MOSFET

TSM35N10, 100V N-Channel Power MOSFET

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TSM35N10 Features

* Advanced Trench Technology Low RDS(ON) 37mΩ (Max.) Low gate charge typical @ 34nC (Typ.) Low Crss typical @ 45pF (Typ.) Block Diagram Ordering Information Part No. TSM35N10CP ROG Package TO-252 Packing 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product N-Channe