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TSM3N90 Datasheet - Taiwan Semiconductor

TSM3N90 900V N-Channel Power MOSFET

TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mo.

TSM3N90 Features

* Low RDS(ON) 4.3Ω (Typ.) Low gate charge typical @ 17nC (Typ.) Low Crss typical @ 8.7pF (Typ.) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Ch

TSM3N90 Datasheet (555.79 KB)

Preview of TSM3N90 PDF

Datasheet Details

Part number:

TSM3N90

Manufacturer:

Taiwan Semiconductor

File Size:

555.79 KB

Description:

900v n-channel power mosfet.

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TSM3N90 900V N-Channel Power MOSFET Taiwan Semiconductor

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