TSM60NB380CH Datasheet - Taiwan Semiconductor

TSM60NB380CH, N-Channel Power MOSFET

TSM60NB380CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 9.5A, 0.38Ω .

Features

* Super-Junction technology
* High performance due to small figure-of-merit
* High ruggedness performance
* High commutation performance
* Pb-free plating
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2

Applications

* Power Supply
* Lighting TO-251 (IPAK) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL IPAK/DPAK Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VDS VGS ID IDM 600 ±30 9.5 6 2

TSM60NB380CH-TaiwanSemiconductor.pdf