TSSA3U45 Datasheet - Taiwan Semiconductor

TSSA3U45, Trench MOS Barrier Schottky Rectifier

TSSA3U45 Taiwan Semiconductor

Features

* - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS

TSSA3U45-TaiwanSemiconductor.pdf