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TSSA3U45 Trench MOS Barrier Schottky Rectifier

TSSA3U45 Description

TSSA3U45 Taiwan Semiconductor .
Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

TSSA3U45 Features

* - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS

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Datasheet Details

Part number
TSSA3U45
Manufacturer
Taiwan Semiconductor
File Size
163.93 KB
Datasheet
TSSA3U45-TaiwanSemiconductor.pdf
Description
Trench MOS Barrier Schottky Rectifier

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📌 All Tags

Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor
Taiwan Semiconductor TSSA3U45-like datasheet