Datasheet4U Logo Datasheet4U.com

TSG25N120CN N-Channel IGBT

TSG25N120CN Description

TSG25N120CN N-Channel IGBT with FRD.TO-3PN Pin Definition: 1.Gate 2.Collector 3.Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 25 G.
The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances,.

TSG25N120CN Features

* 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG25N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate

TSG25N120CN Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: B12

📥 Download Datasheet

Preview of TSG25N120CN PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TSG128128D - Display (Team Source Display)
  • TSG12N06AT - 60V N-Channel DTMOS (Unigroup)
  • TSG320240B1141XXXX00 - Display Module (Winstar)
  • TSG8512 - Switched Capacitor Mask Programmable Filter (ST Microelectronics)
  • TSG85131 - Switched Capacitor Mask Programmable Filter (ST Microelectronics)
  • TSG8531 - Switched Capacitor Mask Programmable Filter (ST Microelectronics)
  • TSGB02 - Digital HCMOS (Atmel-Grenoble)
  • TSGC-DL01A - Touch Sensor (LG)

📌 All Tags

N-Channel IGBT Taiwan Semiconductor
Taiwan Semiconductor TSG25N120CN-like datasheet