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TSM60N06 N-Channel Power MOSFET

TSM60N06 Description

TO-252 (DPAK) Pin Definition: 1.Gate 2.Drain 3.Source TSM60N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 7.3 @ VGS =1.
only.

TSM60N06 Features

* Advanced Trench Technology
* Low RDS(ON) 7.3mΩ (Max. )
* Low gate charge typical @ 81nC (Typ. )
* Low Crss typical @ 339pF (Typ. ) Ordering Information Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Block Diagram N-C

TSM60N06 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A12

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Datasheet Details

Part number
TSM60N06
Manufacturer
Taiwan Semiconductor
File Size
262.33 KB
Datasheet
TSM60N06-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
Taiwan Semiconductor TSM60N06-like datasheet