2SC2290 Datasheet - Toshiba Semiconductor

2SC2290 Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficiency : ηC = 35% (Min.) l Intermodulation Distortion: IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltag.

2SC2290_ToshibaSemiconductor.pdf