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2SC2290 Datasheet - Toshiba Semiconductor

2SC2290, Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Spe.
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2SC2290_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC2290

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

111.36 KB

Description:

Silicon NPN Epitaxial Planar Type Transistor

Applications

* (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min. ) l Power Gain : Gp = 11.8dB (Min. ) l Collector Efficiency : ηC = 35% (Min. ) l Intermodulation Distortion: IMD =
* 30dB (Max. ) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Bas

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