Datasheet4U Logo Datasheet4U.com

2SC2200 - SILICON NPN TRANSISTOR

Datasheet Summary

Features

  • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max.
  • High Collector Breakdown Voltage : V CEO=400V.

📥 Download Datasheet

Datasheet preview – 2SC2200

Datasheet Details

Part number 2SC2200
Manufacturer Toshiba
File Size 89.96 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC2200 Datasheet
Additional preview pages of the 2SC2200 datasheet.

📁 Similar Datasheet

  • 2SC2206 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC2209 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC2209 - NPN Transistor (INCHANGE)
  • 2SC2209 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2210 - NPN Transistor (Sanyo Semicon Device)
  • 2SC2210 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semiconductor)
  • 2SC2216 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SC2216 - NPN Transistor (LGE)
  • 2SC2216 - NPN Transistor (Cnelectr)
  • 2SC2216 - NPN Transistor (WEJ)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
SILICON NPN TRIPLE DIFFUSED TYPE 2SC2200 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max. • High Collector Breakdown Voltage : V CEO=400V INDUSTRIAL APPLICATIONS Unit in mm 01&5 tQl m+C.12 014.0-0.10 jZflO^Q05 24.38- 0.05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL v CBO RATING UNIT 500 V Collector-Emitter Voltage VCEO 400 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature VEBO IB PC 40 150 1. BASE 2. EMITTER COLLECTOR (HEAT SINK) Storage Temperature Range T stg -65^150 °C TOSHIBA 2- 14A1A ELECTRICAL CHARACTERISTICS (Ta==25°0 Mounting Kit No.
Published: |