Datasheet4U Logo Datasheet4U.com

2SC2215 - SILICON NPN TRANSISTOR

Datasheet Summary

Features

  • High Gain : Gpe =35dB (Typ. ) (f=45MHz).
  • Excellent Forward AGC Characteristics. 2SC2215 Unit in mm.

📥 Download Datasheet

Datasheet preview – 2SC2215

Datasheet Details

Part number 2SC2215
Manufacturer Toshiba
File Size 102.24 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC2215 Datasheet
Additional preview pages of the 2SC2215 datasheet.
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
SILICON NPN PLANAR TYPE TV 1ST, 2ND PICTURE IF AMPLIFIER APPLICATIONS. FEATURES • High Gain : Gpe =35dB (Typ.) (f=45MHz) • Excellent Forward AGC Characteristics. 2SC2215 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO vEBO ic IE ?C T J T stg RATING 40 UNIT V 40 V 4 V 50 mA -50 mA 250 mW 125 °C -55^125 °C 1. BASS 2. EMITTER a COLLECTOR TO 92 43 2 — 5P IE Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current SYMBOL L CBO TEST CONDITION VCB=40V, IE=0 MIN. TYP. MAX. UNIT 0.
Published: |