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2SC2290A Datasheet - Toshiba Semiconductor

2SC2290A - Silicon NPN epitaxial planar type Transistor

2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base V

2SC2290A_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC2290A

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

197.20 KB

Description:

Silicon npn epitaxial planar type transistor.

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