2SC3266 Datasheet - Toshiba Semiconductor

2SC3266 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3266 Power Amplifier Applications Power Switching Applications 2SC3266 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) Complementary to 2SA1296 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Ts.

2SC3266_ToshibaSemiconductor.pdf