2SC3267 Datasheet - Toshiba Semiconductor

2SC3267 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tst.

2SC3267 Datasheet (119.95 KB)