2SC3326 Datasheet - Toshiba Semiconductor

2SC3326 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm AEC-Q101 Qualified (Note1). High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (T.

2SC3326_ToshibaSemiconductor.pdf