2SC3328 Datasheet - Toshiba Semiconductor

2SC3328 NPN TRANSISTOR

2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature St.

2SC3328 Datasheet (157.78 KB)