2SC3329 Datasheet - Toshiba Semiconductor

2SC3329 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Recommended for The First Stages of MC Head Amplifiers 2SC3329 Unit: mm Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) Low pulse noise. Low 1/f noise Low base spreading resistance: rbb’ = 2.0 Ω (typ.) Complementary to 2SA1316 Maximum Ratings (Ta = 25°C) Characteristics Collector-base vo.

2SC3329_ToshibaSemiconductor.pdf