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2SC4213 Datasheet - Toshiba Semiconductor

2SC4213 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum Ratings (Ta  25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter.

2SC4213_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC4213

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

532.52 KB

Description:

Silicon npn transistor.

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2SC4213 2SC4213 Silicon NPN Transistor Toshiba Semiconductor

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