2SC5359 Datasheet - Toshiba Semiconductor

2SC5359 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm High breakdown voltage: VCEO = 230 V Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current I.

2SC5359_ToshibaSemiconductor.pdf