2SC5359 Datasheet - Toshiba Semiconductor

2SC5359, NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications 2SC5359 Unit: mm * High breakdown voltage: VCEO = 2.

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2SC5359_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC5359

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

175.69 KB

Description:

NPN TRANSISTOR

Applications

* 2SC5359 Unit: mm
* High breakdown voltage: VCEO = 230 V
* Complementary to 2SA1987
* Suitable for use in 100-W high fidelity audio amplifier’s output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Col

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2SC5359 NPN TRANSISTOR Toshiba Semiconductor

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