2SJ537 Datasheet (Toshiba Semiconductor) - Silicon P-Channel MOSFET

2SJ537, Silicon P-Channel MOSFET

2SJ537 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSVI) 2SJ537 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.5 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 50 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maxi

2SJ537 Features

* (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

* Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment