2SJ531 Datasheet - Hitachi Semiconductor

2SJ531, Silicon P-Channel MOSFET

2SJ531 Silicon P Channel MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd.Edition Jun 1998 .

Features

* Low on-resistance R DS(on) = 0.050 Ω typ.
* Low drive current.
* 4V gate drive devices.
* High speed switching. Outline TO
* 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to

2SJ531_HitachiSemiconductor.pdf