2SJ530 Silicon P-Channel MOSFET

Hitachi Semiconductor

Description

2SJ530(L),2SJ530(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-655B (Z) 3rd.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SJ530
Manufacturer: Hitachi Semiconductor
File Size: 57.58 KB
Datasheet: 2SJ530_HitachiSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Features

* Low on-resistance R DS(on) = 0.08 Ω typ.
* 4V gate drive devices.
* High speed switching. Outline DPAK
* 2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to

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2SJ530 Silicon P-Channel MOSFET Hitachi Semiconductor

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