2SJ533 Silicon P-Channel MOSFET

Hitachi Semiconductor

Description

2SJ533 Silicon P Channel MOS FET High Speed Power Switching ADE-208-649B (Z) 3rd.Edition Jun 1998 .

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Datasheet Specifications

Part number: 2SJ533
Manufacturer: Hitachi Semiconductor
File Size: 53.00 KB
Datasheet: 2SJ533_HitachiSemiconductor.pdf
Description: Silicon P-Channel MOSFET

Features

* Low on-resistance R DS(on) = 0.028 Ω typ.
* Low drive current.
* 4V gate drive devices.
* High speed switching. Outline TO
* 220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to

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2SJ533 Silicon P-Channel MOSFET Hitachi Semiconductor

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