2SK1930 Datasheet, Mosfet, Toshiba Semiconductor

✔ 2SK1930 Application

Unit: mm l Low drain
source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |

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Part number:

2SK1930

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

239.86 KB

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📄 Datasheet

Description:

Silicon n-channel mosfet.

📥 Download PDF (239.86 KB)

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Best Price

Toshiba America Electronic Components

2SK1930

SILICON N-CHANNEL MOS TYPE (PI-MOSII5) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT USA

990 In Stock

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2SK1930 Silicon N-Channel MOSFET Toshiba Semiconductor