2SK1937 Datasheet, transistor equivalent, Inchange Semiconductor

PDF File Details

Part number:

2SK1937

Manufacturer:

Inchange Semiconductor

File Size:

219.42kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

  • Drain Current   –ID= 15A@ TC=25℃
  • Drain Source Voltage- : VDSS= 500V(Min)
  • Fast Switching Spee

  • Datasheet Preview: 2SK1937 📥 Download PDF (219.42kb)
    Page 2 of 2SK1937

    2SK1937 Application

    • Applications
    • Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 5

    TAGS

    2SK1937
    N-Channel
    MOSFET
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2SK193 - N-Channel FET (NEC)
    .

    2SK1930 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
    2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio.

    2SK1931 - VR Series Power MOSFET (Shindengen Electric Mfg.Co.Ltd)
    SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1931 ( F5E20 ) 200V 5A FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is s.

    2SK1933 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
    2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakd.

    2SK1933 - Silicon N Channel MOS FET (Renesas)
    2SK1933 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown .

    2SK1933 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.

    2SK1934 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
    2SK1934 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakd.

    2SK1936 - N-Channel MOSFET Transistor (Inchange Semiconductor)
    isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.

    2SK1936-01 - N-channel MOS-FET (Fuji Electric)
    2SK1936-01 FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ±.

    2SK1937-01 - N-channel MOS-FET (Fuji Electric)
    2SK1937-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts