Part number:
2SK1936-01
Manufacturer:
Fuji Electric
File Size:
216.34 KB
Description:
N-channel mos-fet.
2SK1936-01 Datasheet (216.34 KB)
* - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum
2SK1936-01 Datasheet (216.34 KB)
2SK1936-01
Fuji Electric
216.34 KB
N-channel mos-fet.
📁 Related Datasheet
2SK1936 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·Minimum L.
2SK193 - N-Channel FET
(NEC)
.
2SK1930 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive Applicatio.
2SK1931 - VR Series Power MOSFET
(Shindengen Electric Mfg.Co.Ltd)
SHINDENGEN
VR Series Power MOSFET
N-Channel Enhancement type
2SK1931
( F5E20 )
200V 5A
FEATURES •œ Applicable to 4V drive. •œ The static Rds(on) is s.
2SK1933 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1933
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching No secondary breakd.
2SK1933 - Silicon N Channel MOS FET
(Renesas)
2SK1933
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • No secondary breakdown .
2SK1933 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.
2SK1934 - Silicon N-Channel MOSFET
(Hitachi Semiconductor)
2SK1934
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on–resistance High speed switching No secondary breakd.
