2SK2862 N-Channel MOSFET

Toshiba Semiconductor

Description

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2862 DC *DC Converter, Relay Drive and Motor Drive Appl.

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Datasheet Specifications

Part number: 2SK2862
Manufacturer: Toshiba ↗ Semiconductor
File Size: 418.43 KB
Datasheet: 2SK2862_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Features

* entative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no l

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 2.9 Ω (typ. ) z High forward transfer admittance : |Yfs| = 1.7 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

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2SK2862 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK2862-like datasheet