2SK2862 Datasheet - Toshiba Semiconductor

2SK2862 N-Channel MOSFET

2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2862 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 1.7 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit .

2SK2862 Features

* entative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no l

2SK2862 Datasheet (418.43 KB)