2SK2963 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Un.

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Datasheet Specifications

Part number: 2SK2963
Manufacturer: Toshiba ↗ Semiconductor
File Size: 311.11 KB
Datasheet: 2SK2963_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Applications

* Unit: mm
* 4 V gate drive
* Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ. )
* High forward transfer admittance: |Yfs| = 1.2 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
* Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 m

2SK2963 Distributors

📁 Related Datasheet

2SK296 2SK2960 2SK2968 2SK2969 2SK2900-01 2SK2901-01L

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2SK2963 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SK2963-like datasheet