2SK2963 Datasheet - Toshiba Semiconductor

2SK2963 Silicon N Channel MOS Type Field Effect Transistor

2SK2963 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-π-MOS V) 2SK2963 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ.) High forward transfer admittance: |Yfs| = 1.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteris.

2SK2963_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2963

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

311.11 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2963 2SK2963 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor