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2SK2961
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2961
Relay Drive, Motor Drive and DC−DC Converter Application
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
60 60 ±20 2.0 6.0 0.9 150 −55~150
V V V
A
W °C °C
JEDEC
TO-92MOD
JEITA
—
TOSHIBA
2-5J1C
Weight: 0.
2SK2961 Datasheet
