2SK2961 Datasheet - Toshiba Semiconductor

2SK2961 Silicon N Channel MOS Type Field Effect Transistor

2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSV) 2SK2961 Relay Drive, Motor Drive and DC DC Converter Application Unit: mm z Low drain source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.) z Low leakage current : IDSS = 100 μA (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain.

2SK2961 Datasheet (685.49 KB)

2SK2961 Datasheet Preview — Preview of 2SK2961 PDF

Datasheet Details

Part number:

2SK2961

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

685.49 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2961 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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