2SK2965 Datasheet - Toshiba Semiconductor

2SK2965 Silicon N Channel MOS Type Field Effect Transistor

2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2965 Switching Regulator, DC DC Converter and Motor Drive Applications Unit: mm z Low drain source ON-resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 10 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni.

2SK2965 Features

* ich may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains

2SK2965 Datasheet (206.22 KB)

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Datasheet Details

Part number:

2SK2965

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

206.22 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2965 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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