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2SK2965 Silicon N Channel MOS Type Field Effect Transistor

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Description

2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2965 Switching Regulator, DC *DC Converter and Motor Dr.

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Features

* ich may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains

Applications

* Unit: mm z Low drain
* source ON-resistance : RDS (ON) = 0.15 Ω (typ. ) z High forward transfer admittance : |Yfs| = 10 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Cha

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📌 All Tags

Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SK2965-like datasheet