2SK2964 Datasheet - Toshiba Semiconductor

2SK2964 Silicon N Channel MOS Type Field Effect Transistor

2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 π MOSVI) 2SK2964 Chopper Regulators, DC DC Converters and Motor DriveApplications z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.13 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.5 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symb.

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2SK2964_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2964

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

403.94 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2964 2SK2964 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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