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2SK2964 Silicon N Channel MOS Type Field Effect Transistor

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Description

2SK2964 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 *π *MOSVI) 2SK2964 Chopper Regulators, DC *DC Converters .

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Features

* OSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable

Applications

* z 4-V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.13 Ω (typ. ) z High forward transfer admittance: |Yfs| = 2.5 S (typ. ) z Low leakage current: IDSS = 100 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

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