2SK2967 Datasheet - Toshiba Semiconductor

2SK2967 Silicon N Channel MOS Type Field Effect Transistor

2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2967 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 48 mΩ (typ.) z High forward transfer admittance : |Yfs| = 30 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit D.

2SK2967 Features

* le laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29

2SK2967 Datasheet (415.97 KB)

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Datasheet Details

Part number:

2SK2967

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

415.97 KB

Description:

Silicon n channel mos type field effect transistor.

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2SK2967 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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