2SK2967 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2967 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSV) 2SK2967 DC *DC Converter, Relay Drive and Motor Drive Appl.

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Datasheet Specifications

Part number: 2SK2967
Manufacturer: Toshiba ↗ Semiconductor
File Size: 415.97 KB
Datasheet: 2SK2967_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Features

* le laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 48 mΩ (typ. ) z High forward transfer admittance : |Yfs| = 30 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

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2SK2967 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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