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2SK4059TV Datasheet - Toshiba Semiconductor

2SK4059TV Silicon N-Channel MOS Type FET

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) www.DataSheet4U.com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA mW °C °C 0.4 1 2 Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range 0.4 0.28±0.02 .

2SK4059TV_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK4059TV

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

179.59 KB

Description:

Silicon n-channel mos type fet.

2SK4059TV Distributor

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2SK4059TV 2SK4059TV Silicon N-Channel MOS Type FET Toshiba Semiconductor