2SK4059TV Datasheet (Toshiba Semiconductor) - Silicon N-Channel MOS Type FET

2SK4059TV, Silicon N-Channel MOS Type FET

2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) www.DataSheet4U.com Characteristic Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA mW °C °C 0.4 1 2 Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range 0.4 0.28±0.02